Research Associate in Silicon Carbide in Power Electronics (Fixed Term)
A position exists, for one full time Research Associate in the Department of Engineering, to work on developing new devices and carrying out extensive TCAD analysis for Silicon Carbide for high voltage (over 600V) and high power applications commencing September 2025. The successful candidates will have a PhD in the relevant field and preference will be given to candidates who have expertise on Wide bandgap power devices, experience with Power Semiconductor TCAD simulations and ECAD design, Comsol or Ansys. Also other semiconductor simulators such as Synopsis (Dessis) or Medici and with layout design such as Cadence.
Applicants are required to submit a publications list so must have a good publication record, with two or more international journals and two or more international conference papers. Good communication skills are required to write up research work for presentations publications and to continually update their knowledge and understanding in the field of power devices with special emphasis on Wide bandgap materials and technologies.
The post holder will be located in West Cambridge, UK.
Salary Ranges: Research Associate: £36,024 - £44,263
Fixed-term: The funds for this post are available for 36 months in the first instance.
Click the 'Apply' button below to register an account with our recruitment system (if you have not already) and apply online.
Please ensure that you upload your Curriculum Vitae (CV), a covering letter and publication list in the Upload section of the online application. If you upload any additional documents which have not been requested, we will not be able to consider these as part of your application. Please submit your application by midnight on the closing date.
If you have any questions about this vacancy or the application process, please contact Michyla Castle, mc2149@cam.ac.uk.
Please quote reference NM45909 on your application and in any correspondence about this vacancy.
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