Fixed-term: The funds for this post are available until 30 April 2019 in the first instance with some possibility of extension. The Cambridge Centre for Gallium Nitride in the University of Cambridge, requires a Post Doctoral Research Associate to work on the growth of GaN on Si HEMT structures. This is a collaboration with the Universities of Cardiff, Sheffield, Glasgow and Manchester and aims to demonstrate an integrated GaN technology which delivers both RF power amplifiers and power switches in a single circuit. This requires the development of common epitaxy platform suitable for both high frequency and power devices. The PDRA will carry out growth to deliver high performance HEMT structures to the consortium partners and research the impact of the GaN growth process on the conductivity of large area Si substrates. Opportunities exist to work closely with the project partners to gain experience of all aspects of the device design, processing and test process. The person appointed will have a PhD in Materials Science, Physics or a related discipline, knowledge of nitride semiconductors, and in particular, expertise in growth of nitride semiconductors by metal-organic vapour phase epitaxy (MOVPE). They will also have a strong record of leading on publications in high quality scientific journals. They will lead the experimental aspects of the growth activity and present their results to the project partners at quarterly review meetings. The ideal candidate will also have experience of a range of characterisation techniques such as atomic force microscopy, X-ray diffraction, scanning electron microscopy and/or transmission electron microscopy and their application in the nitrides system. The post is available to start as soon as the candidate is available.
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Please upload a CV, publications list and covering letter. Further information is available from Dr Rachel Oliver, Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS, UK, e-mail: firstname.lastname@example.org.
Please quote reference LJ13496 on your application and in any correspondence about this vacancy.
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